The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2007

Filed:

Sep. 02, 2004
Applicants:

Shin Su, Banchiau, TW;

Chun-hsiang Lai, Taichung, TW;

Cha-ling LU, Hsinchu, TW;

Yen-hung Yeh, Yangmei Township, Taoyuan County, TW;

Tao-cheng LU, Hsinchu, TW;

Inventors:

Shin Su, Banchiau, TW;

Chun-Hsiang Lai, Taichung, TW;

Cha-Ling Lu, Hsinchu, TW;

Yen-Hung Yeh, Yangmei Township, Taoyuan County, TW;

Tao-Cheng Lu, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A device for connection between supply buses in mixed power integrated circuits includes a diode in series with a transistor with an active p-ring in a semiconductor substrate. The active p-ring surrounds the source and drain of the transistor with a conductive region having the same conductivity type as the semiconductor substrate. A control circuit coupled to the p-ring applies a bias voltage in response to an ESD event affecting the first and second conductors. The bias voltage tends to inject carriers into the semiconductor substrate which enables discharge of the short voltage pulse via a parasitic SCR in the substrate from the anode of the diode to the source of the transistor.


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