The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2007
Filed:
Jun. 21, 2005
Applicants:
Byoung W. Min, Austin, TX (US);
Laegu Kang, Austin, TX (US);
Michael Khazhinsky, Austin, TX (US);
Inventors:
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for making a semiconductor device is provided. The method comprises (a) providing a semiconductor stack comprising a semiconductor substrate (), a first semiconductor layer (), and a first dielectric layer () disposed between the substrate and the first semiconductor layer; (b) forming a first trench in the first dielectric layer which exposes a portion of the substrate; (c) forming a first doped region () in the exposed portion of the substrate; and (d) forming anode () and cathode () regions in the first implant region.