The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2007

Filed:

Dec. 26, 2002
Applicants:

Shuzo Sato, Kanagawa, JP;

Yuji Segawa, Tokyo, JP;

Akira Yoshio, Tokyo, JP;

Hiizu Ootorii, Tokyo, JP;

Zenya Yasuda, Kanagawa, JP;

Masao Ishihara, Tokyo, JP;

Takeshi Nogami, Kanagawa, JP;

Naoki Komai, Kanagawa, JP;

Inventors:

Shuzo Sato, Kanagawa, JP;

Yuji Segawa, Tokyo, JP;

Akira Yoshio, Tokyo, JP;

Hiizu Ootorii, Tokyo, JP;

Zenya Yasuda, Kanagawa, JP;

Masao Ishihara, Tokyo, JP;

Takeshi Nogami, Kanagawa, JP;

Naoki Komai, Kanagawa, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C25D 17/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of production and a method of polishing a semiconductor device and a polishing apparatus, capable of easily flattening an initial unevenness of a metal film, excellent in efficiency of removal of an excess metal film, and capable of suppressing damage to an interlayer insulation film below the metal film when flattening the metal film by polishing, the polishing method including the steps of interposing an electrolytic solution including a chelating agent between a cathode member and the copper film, applying a voltage between the cathode member used as a cathode and the copper film used as an anode to oxidize the surface of the copper film and forming a chelate film of the oxidized copper, selectively removing a projecting portion of the chelate film corresponding to the shape of the copper film to expose the projecting portion of the copper film at its surface, and repeating the above chelate film forming step and the above chelate film removing step until the projecting portion of the copper film is flattened.


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