The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Mar. 30, 2005
Hsu Kai Yang, Pleasanton, CA (US);
Po-kang Wang, San Jose, CA (US);
Xizeng Shi, Fremont, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Applied Spintadnics, Inc., Milpitas, CA (US);
Abstract
In an MRAM array based on MTJs, the size of segmented word line select transistors and their associated connections become a significant overhead, especially when the operating point is chosen deep along the hard axis of the asteroid curve. This problem has been overcome by placing the big segmented word line select transistors under the MTJ array and reducing the overall MRAM cell array down to a level comparable to a simple Cross Point MRAM array.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile