The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2007

Filed:

Oct. 27, 2004
Applicants:

Kazumasa Hasegawa, Fujimi-machi, JP;

Hiroyuki Aizawa, Shiojiri, JP;

Inventors:

Kazumasa Hasegawa, Fujimi-machi, JP;

Hiroyuki Aizawa, Shiojiri, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 5/04 (2006.01); G11C 7/02 (2006.01); G11C 11/22 (2006.01); H01L 31/119 (2006.01); H01L 29/00 (2006.01); H01L 23/552 (2006.01);
U.S. Cl.
CPC ...
Abstract

A crosspoint-type ferroelectric memory is provided. In the crosspoint-type ferroelectric memory, a first memory cell array and a second memory cell array are stacked with a first interlayer insulating layer and a second interlayer insulating layer therebetween. The first memory cell array includes lower electrodes formed in stripes, upper electrodes formed in stripes in a direction that crosses the lower electrodes, ferroelectric capacitors that are disposed at least at intersecting parts of the lower electrodes and the upper electrodes, and an embedded insulating layer formed between the ferroelectric capacitors. The interlayer insulating layer includes a conductive layer between a first insulating layer and a second insulating layer.


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