The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Dec. 24, 2003
Yee-chia Yeo, Hsin-Chu, TW;
Wen-chin Lee, Hsin-Chu, TW;
Chih-hsin Ko, Kaohsiung, TW;
Chung-hu GE, Taipei, TW;
Chun-chieh Lin, Hsin-Chu, TW;
Chenming HU, Hsin-Chu, TW;
Yee-Chia Yeo, Hsin-Chu, TW;
Wen-Chin Lee, Hsin-Chu, TW;
Chih-Hsin Ko, Kaohsiung, TW;
Chung-Hu Ge, Taipei, TW;
Chun-Chieh Lin, Hsin-Chu, TW;
Chenming Hu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A heterostructure resistor comprises a doped region formed in a portion of a semiconductor substrate, the substrate comprising a first semiconductor material having a first natural lattice constant. The doped region comprises a semiconductor layer overlying the semiconductor substrate. The semiconductor layer comprises a second semiconductor material with a second natural lattice constant.