The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Oct. 17, 2001
Andres Bryant, Essex Junction, VT (US);
Jerome B. Lasky, Essex Junction, VT (US);
Effendi Leobandung, Wappingers Falls, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
Andres Bryant, Essex Junction, VT (US);
Jerome B. Lasky, Essex Junction, VT (US);
Effendi Leobandung, Wappingers Falls, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A silicon on insulator transistor is disclosed which has a Schottky contact to the body. The Schottky contact may be formed on the source and/or drain side of the gate conductor. A spacer, with at least a part thereof being disposable, is formed on the sidewalls of the gate conductor. Extension regions are provided in the substrate which extend under the spacer and the gate conductor. Source and drain diffusion regions are implanted into the substrate adjacent to the extension regions. The disposable part of the spacer is then removed to expose a portion of the extension region. A metal layer is formed at least in the extension regions, resulting in the Schottky contact.