The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Dec. 07, 2001
Hideo Yamanaka, Kanagawa, JP;
Hideo Yamanaka, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
An object of the present invention is to provide a method for easily forming a polycrystalline semiconductor thin-film, such as polycrystalline silicon having high crystallinity and high quality, or a single crystalline semiconductor thin-film at inexpensive cost, the crystalline semiconductor thin-film having a large area, and to provide an apparatus for processing the method described above. In forming a polycrystalline (or single crystalline) semiconductor thin-film (), such as a polycrystalline silicon thin-film, having high crystallinity and a large grain size on a substrate (), or in forming a semiconductor device having the polycrystalline (or single crystalline) semiconductor thin-film () on the substrate (), a method comprises forming a low-crystallization semiconductor thin-film (A) on the substrate (), and subsequently heating and cooling this low-crystallization semiconductor thin-film (A) to a fusion, a semi-fusion, or a non-fusion state by flash lamp annealing to facilitate the crystallization of the low-crystallization semiconductor thin-film, whereby a polycrystalline (single crystalline) semiconductor thin-film () is obtained. A method for forming the semiconductor device and an apparatus for processing the methods are also disclosed.