The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
May. 26, 2004
Doo-won Kang, Gangwon-do, KR;
Kap-soo Lee, Gyeonggi-do, KR;
Hyun-jong Lee, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
CVD metallization processes and CVD apparatus used therein are provided. The processes include forming a barrier metal layer on a semiconductor substrate and cooling the semiconductor substrate having the barrier metal layer without breaking vacuum. An additional metal layer may be formed on the cooled barrier metal layer. The in-situ cooling process is preferably performed inside a cooling chamber installed between first and second transfer chambers, which are separated from each other. The barrier metal layer may be formed inside a CVD process chamber attached to the first transfer chamber, and the additional metal layer may be formed inside another CVD process chamber attached to the second transfer chamber.