The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Jan. 12, 2005
Matthias Krönke, Dresden, DE;
Joachim Patzer, Dessau, DE;
Matthias Krönke, Dresden, DE;
Joachim Patzer, Dessau, DE;
Infineon Technologies AG, Munich, DE;
Abstract
The invention provides a method for fabricating contact-making connections, having the steps of: a) providing a substrate () with electronic circuit units () arranged thereon, an intermediate layer () filling an interspace between the electronic circuit units (); an insulation layer () being deposited on the electronic circuit units () and on the intermediate layer (); a masking layer () being deposited on the insulation layer (); and the masking layer () being patterned with a through-plating structure (); b) patterning a contact-making region by means of the masking layer (), a contact-making hole () being etched through the insulation layer () and the intermediate layer () as far as the substrate (), a section of the substrate () being uncovered in accordance with the through-plating structure (); c) filling the contact-making hole () with a through-plating material (); d) polishing back the covering layer () deposited on the masking layer () as far as the masking layer (); e) depositing a contact-making layer () on the masking layer () and the through-plating material, the contact-making layer () being electrically contact-connected with the through-plating material (); and f) patterning the contact-making layer () together with the residual masking layer () in accordance with a structure of a contact-making layer mask () applied to the contact-making layer () in order to form interconnects as contact-making connections in a metallization plane (M).