The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Jul. 23, 2004
Kenneth Duerksen, Austin, TX (US);
David C. Wang, Austin, TX (US);
Robert J. Soave, LaGrangeville, NY (US);
Kenneth Duerksen, Austin, TX (US);
David C. Wang, Austin, TX (US);
Robert J. Soave, LaGrangeville, NY (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for forming a mechanically strengthened feature in a low-k dielectric film on a substrate includes using either spin-on-dielectric (SOD) techniques, or chemical vapor deposition (CVD) techniques to form a low-k dielectric film on the substrate. A sidewall of the feature in the low-k dielectric film is then treated in order to increase the film's mechanical strength. Treatment of the sidewall of the feature in the low-k dielectric film comprises forming a hardened layer by subjecting the low-k dielectric film to low energy, high flux ion implantation. Process parameters of the ion implantation are selected such that the implantation process does not cause a substantial change in the dielectric constant of the low-k dielectric film.