The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Oct. 28, 2004
Applicants:
Matthias Goldbach, Dresden, DE;
Ulrich Frey, Dresden, DE;
Björn Fischer, München, DE;
Inventors:
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01);
U.S. Cl.
CPC ...
Abstract
Transistor structures, with one source/drain region connected to a charge storage device to be insulated includes an asymmetric gate conductor structure. At a first side wall, which faces the one source/drain region, the asymmetric gate conductor structure has a side wall oxide with a greater thickness and a bird's beak structure with a greater length than at an opposite, second side wall. An effective channel length is increased for the same feature size of the gate conductor structure. Memory cells can be realized in a higher density.