The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Sep. 26, 2003
Rainer Bruchhaus, Munich, DE;
Karl Hornik, Kanagawa-ken, JP;
Rainer Bruchhaus, Munich, DE;
Karl Hornik, Kanagawa-ken, JP;
Infineon Technologies AG, Munich, unknown;
Abstract
A process for fabricating a ferrocapacitor comprises etching a layer of amorphous PZT formed over a layer having a low concentration of nucleation centres for PZT crystallisatlon. The etching step forms individual PZT elements. The side surfaces of the PZT elements are then coated with a layer of a material which promotes crystallisation of the PZT, such as one having a high concentration of PZT crystallisation centres (e.g. TiO), and a PZT annealing step is carried out. The result is that the PZT has a high degree of crystallisation, with grain boundaries extending substantially horizontally through the PZT elements.