The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Feb. 13, 2003
David Bour, Cupertino, CA (US);
Chaokun Lin, Fremont, CA (US);
Michael Tan, Menlo Park, CA (US);
Bill Perez, San Jose, CA (US);
David Bour, Cupertino, CA (US);
Chaokun Lin, Fremont, CA (US);
Michael Tan, Menlo Park, CA (US);
Bill Perez, San Jose, CA (US);
Avago Technologies General IP (Singapore) Pte. Ltd., Singapore, SG;
Abstract
An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 10dopant atoms per cmor greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.