The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Nov. 17, 2005
Wen Chiao Ho, Tainan, TW;
Chin Hung Chang, Tainan, TW;
Kuen Long Chang, Taipei, TW;
Chun Hsiung Hung, Hsinchu, TW;
Wen Chiao Ho, Tainan, TW;
Chin Hung Chang, Tainan, TW;
Kuen Long Chang, Taipei, TW;
Chun Hsiung Hung, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
The present invention provides a novel method in altering the sequence of multi-level-cell programming in a multi-bit-cell of a nitride trapping memory cell that reduces or eliminates voltage threshold shifts between program steps while avoiding the suppression in the duration of a read window caused by a complementary bit disturbance. In a first embodiment, the present invention programs the multi-level cell in a multi-bit-cell having four bits in the following order: programming a third program level (level3), programming a first program level (level1) and a second program level (level2) to level 1, and programming the second program level from the first program level. In a second embodiment, the present invention programs the multi-level cell in the multi-bit-cell having four bits in the following order: programming a third program level (level3), programming a second program level (level2), and programming a first program level (level 1).