The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Mar. 30, 2004
Min LI, Dublin, CA (US);
Youfeng Zheng, San Jose, CA (US);
Kunliang Zhang, Santa Clara, CA (US);
Simon Liao, Fremont, CA (US);
Kochan Ju, Monte Sereno, CA (US);
Min Li, Dublin, CA (US);
Youfeng Zheng, San Jose, CA (US);
Kunliang Zhang, Santa Clara, CA (US);
Simon Liao, Fremont, CA (US);
Kochan Ju, Monte Sereno, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A method for fabricating a stitched CPP synthetic spin-valve sensor with in-stack stabilization of its free layer. The method can also be applied to the formation of a stitched tunneling magnetoresistive sensor. The free layer is strongly stabilized by magnetostatic coupling through the use of a longitudinal biasing formation that includes a ferromagnetic layer, denoted LBL, within the pillar portion of the sensor and a synthetic exchange coupled tri-layer within the stitched portion of the sensor. The tri-layer consists of two ferromagnetic layers, FMand FMseparated by a coupling layer and magnetized longitudinally in antiparallel directions. A criterion for the magnetic thicknesses of the layers: [t(LBL)+t(FM)]/t(FM)=70/90 angstroms of CoFe insures a strong exchange coupling. The magnetization of the tri-layer is done in a low field anneal that does not disturb the previous magnetization of the ferromagnetic free layer.