The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Jun. 08, 2004
Shun Imai, Komoro, JP;
Satoshi Sasaki, Takasaki, JP;
Katsunari Nakazawa, Komoro, JP;
Tetsuaki Adachi, Tobu, JP;
Shun Imai, Komoro, JP;
Satoshi Sasaki, Takasaki, JP;
Katsunari Nakazawa, Komoro, JP;
Tetsuaki Adachi, Tobu, JP;
Renesas Technology Corp., Tokyo, JP;
Hitachi ULSI Systems Co., Ltd., Tokyo, JP;
Abstract
Cross-band isolation characteristics are to be significantly improved without using any filtering circuit. In the central part of a semiconductor chip provided in an RF power module is formed a ground wiring layer from the upper part downward. This ground wiring layer is formed on the boundary between GSM side transistors and DCS side transistors for amplifying different frequency bands. Over the ground wiring layer are formed chip electrodes at equal intervals, and any one of the chip electrodes is connected via a bonding wire to a bonding electrode. The bonding electrode is formed over a module wiring board over which the semiconductor chip is to be mounted, and the ground wiring layer is connected to it. Harmonic signals are trapped by the ground wiring layer and the bonding wire.