The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Feb. 03, 2005
Yoichi Sasaki, Kawasaki, JP;
Koichi Ohto, Kawasaki, JP;
Noboru Morita, Kawasaki, JP;
Tatsuya Usami, Kawasaki, JP;
Hidenobu Miyamoto, Kawasaki, JP;
Yoichi Sasaki, Kawasaki, JP;
Koichi Ohto, Kawasaki, JP;
Noboru Morita, Kawasaki, JP;
Tatsuya Usami, Kawasaki, JP;
Hidenobu Miyamoto, Kawasaki, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor devicecomprises a SiCN filmformed on a semiconductor substrate (not shown), a first SiOC filmformed thereon, a SiCN filmformed thereon, a second SiOC filmformed thereon, a SiOfilmand a SiCN filmformed thereon. The first SiOC filmhas a barrier metal layerand viaformed therein, and the second SiOC filmhas a barrier metal layerand wiring metal layerformed therein. Carbon content of the second SiOC filmis adjusted larger than that of the first SiOC film. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.