The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Apr. 29, 2004
Yasushi Hayakawa, Hyogo, JP;
Katsushi Asahina, Hyogo, JP;
Yasushi Hayakawa, Hyogo, JP;
Katsushi Asahina, Hyogo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A terminating resistance element of an LSI chip has an Ntype impurity diffusion region formed at the surface of a P type well at the surface of a semiconductor substrate, an Ntype impurity diffusion layer formed at the surface of the Ntype impurity diffusion region, and a pair of electrodes formed at respective ends at the surface of the Ntype impurity diffusion layer. The Ntype impurity diffusion region has an impurity concentration lower than the impurity concentration of the Ntype impurity diffusion layer. Therefore, the capacitance of the PN junction becomes smaller as compared to the conventional case where the N type impurity diffusion layer is provided directly at the surface of a P type semiconductor substrate. Therefore, reflection and attenuation of an input signal are suppressed.