The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Mar. 22, 2005
Katsuhiko Hieda, Yokohama, JP;
Katsuhiko Hieda, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes a substrate including a semiconductor and a trench, and an electrically rewritable semiconductor memory cell on the substrate, the semiconductor memory cell comprising a charge storage layer including an upper surface and a lower surface, an area of the lower surface being smaller than an area of the upper surface, and at least a part of the charge storage layer being provided in the trench, first insulating layer between the lower surface of the charge storage layer and a bottom surface of the trench, second insulating layer between a side surface of the trench and a side surface of the charge storage layer and between the side surface of the trench and a side surface of the first insulating layer, third insulating layer on the charge storage layer, and a control gate electrode on the third insulating layer.