The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Jul. 14, 2004
Erik S. Jeng, Taipei, TW;
Wu-ching Chou, Jungli, TW;
Li-kang Wu, Kaohsiung, TW;
Chien-chen LI, Hualien, TW;
Erik S. Jeng, Taipei, TW;
Wu-Ching Chou, Jungli, TW;
Li-Kang Wu, Kaohsiung, TW;
Chien-Chen Li, Hualien, TW;
Chung Yuan Christian University, Jungli, TW;
Abstract
A process for fabricating non-volatile memory by tilt-angle ion implantation comprises essentially the steps of implanting sideling within a nitride dielectric layer heterogeneous elements such as, for example, Ge, Si, N2, O2, and the like, for forming traps capable of capturing more electrons within the nitride dielectric layer such that electrons can be prevented from binding together as the operation time increased; etching off both ends of the original upper and underlying oxide layers to reduce the structural destruction caused by the implantation of heterogeneous elements; and finally, depositing an oxide gate interstitial wall to eradicate electron loss and hence promote the reliability of the device.