The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Aug. 09, 2004
Bin Yu, Cupertino, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Judy Xilin an, San Jose, CA (US);
Srikanteswara Dakshina-murthy, Austin, TX (US);
Zoran Krivokapic, Santa Clara, CA (US);
Haihong Wang, Fremont, CA (US);
Bin Yu, Cupertino, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Judy Xilin An, San Jose, CA (US);
Srikanteswara Dakshina-Murthy, Austin, TX (US);
Zoran Krivokapic, Santa Clara, CA (US);
Haihong Wang, Fremont, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of forming a semiconductor device includes forming a fin on an insulating layer, where the fin includes a number of side surfaces, a top surface and a bottom surface. The method also includes forming a gate on the insulating layer, where the gate has a substantially U-shaped cross-section at a channel region of the semiconductor device.