The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2007

Filed:

Oct. 27, 2003
Applicants:

Chunhong Hou, Savage, MN (US);

Sining Mao, Savage, MN (US);

Eric S. Linville, Chanhassen, MN (US);

Olle Heinonen, Eden Prairie, MN (US);

Xuefei Tang, Eden Prairie, MN (US);

Qing He, Plymouth, MN (US);

Eric W. Singleton, Maple Plain, MN (US);

Song S. Xue, Eden Prairie, MN (US);

Inventors:

Chunhong Hou, Savage, MN (US);

Sining Mao, Savage, MN (US);

Eric S. Linville, Chanhassen, MN (US);

Olle Heinonen, Eden Prairie, MN (US);

Xuefei Tang, Eden Prairie, MN (US);

Qing He, Plymouth, MN (US);

Eric W. Singleton, Maple Plain, MN (US);

Song S. Xue, Eden Prairie, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/33 (2006.01);
U.S. Cl.
CPC ...
Abstract

A biasing system for a tri-layer reader stack magnetoresistive sensor is disclosed. The tri-layer reader stack includes a first ferromagnetic free layer, a second ferromagnetic free layer, and a magnetoresistive layer between the first and second ferromagnetic free layers. The free layers are positioned in the tri-layer reader stack such that quiescent state magnetizations of the free layers are antiparallel. A biasing layer is positioned with regard to the tri-layer reader stack, typically separated from the tri-layer reader stack by a nonmagnetic spacer layer. A biasing means is positioned such that a magnetization of the biasing layer is perpendicular to the quiescent state magnetizations of the free layers. This biasing results in the free layers having biased magnetizations directed substantially orthogonal with respect to each other.


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