The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Jul. 15, 2005
Koichi Oka, Otsu, JP;
Satoshi Nitta, Kameoka, JP;
Koichi Oka, Otsu, JP;
Satoshi Nitta, Kameoka, JP;
Otsuka Electronics Co., Ltd., Osaka, JP;
Abstract
Impurity is removed from gas, the resultant gas is introduced into a cell, and the intensity of light transmitted through the cellis measured as a reference. Gas containing impurity of which concentration is known, is introduced into the cell, and the intensity of light transmitted through the cellis measured with the temperature and pressure maintained at those used at the measurement of the reference light intensity. Then, the absorbance of the impurity is obtained according to the ratio of the two light intensity data obtained by the two measurements above-mentioned. The impurity absorbance thus obtained is stored, in a memory, as a function of an impurity concentration. Gas containing impurity of which concentration is unknown, is introduced into the cell, and the intensity of light transmitted through the cellis measured with the temperature and pressure maintained at those used at the measurements above-mentioned. The absorbance of the impurity is obtained according to the last-measured light intensity and the reference light intensity. The absorbance thus obtained is applied to the function, thereby to obtain the impurity concentration.