The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Oct. 03, 2002
Kris Baert, Leuven, BE;
Matty Caymax, Leuven, BE;
Cristina Rusu, Leuven, BE;
Sherif Sedky, Gize, EG;
Ann Witvrouw, Herent, BE;
Kris Baert, Leuven, BE;
Matty Caymax, Leuven, BE;
Cristina Rusu, Leuven, BE;
Sherif Sedky, Gize, EG;
Ann Witvrouw, Herent, BE;
Interuniversitair Microelektronica Centrum (IMEC), Leuven, BE;
Abstract
Method and apparatus to obtain as-deposited polycrystalline and low-stress SiGe layers. These layers may be used in Micro Electro-Mechanical Systems (MEMS) devices or micromachined structures. Different parameters are analysed which effect the stress in a polycrystalline layer. The parameters include, without limitation: deposition temperature; concentration of semiconductors (e.g., the concentration of Silicon and Germanium in a SiGelayer, with x being the concentration parameter); concentration of dopants (e.g., the concentration of Boron or Phosphorous); amount of pressure; and use of plasma. Depending on the particular environment in which the polycrystalline SiGe is grown, different values of parameters may be used.