The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Apr. 07, 2005
Keiichi Murayama, Okayama, JP;
Akiyoshi Tamura, Suita, JP;
Masanobu Nogome, Bizen, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A hetero-junction bipolar transistor that satisfies high resistance required to avoid a potential breakdown includes: an n-type sub-collector layerthat is made of GaAs; an n-type first collectorthat is made of a semiconductor material with a smaller avalanche coefficient than that of the sub-collectorand is formed on the sub-collector layer; a second collector layerthat is made of n-type or i-type GaAs with lower dopant concentration than that of the sub-collector layerand is formed on the first collector layer; a p-type base layerthat is made of GaAs and is formed on the second collector layer; and emitter layerthat is made of a semiconductor material with a larger band gap than that of the base layerand is formed on the base layer