The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2007

Filed:

Oct. 29, 2004
Applicants:

Hyo-san Lee, Suwon-si, KR;

Hyung-ho Ko, Seoul, KR;

Chang-ki Hong, Seongnam-si, KR;

Sang-jun Choi, Seoul, KR;

Inventors:

Hyo-san Lee, Suwon-si, KR;

Hyung-ho Ko, Seoul, KR;

Chang-ki Hong, Seongnam-si, KR;

Sang-jun Choi, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.


Find Patent Forward Citations

Lee, Hyo-san. (2007). Paa-based etchant, methods of using same, and resultant structures (U.S. Patent No. 7176041). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7176041

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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