The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Jan. 04, 2001
Applicants:
Shigeto Fujimura, Toda, JP;
Toshiaki Asahi, Toda, JP;
Kenji Sato, Toda, JP;
Inventors:
Assignee:
Nippon Mining & Metals Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/00 (2006.01); C30B 27/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A process for producing compound semiconductor single crystal, comprises the steps of: putting a compound semiconductor raw material into a crucible, setting the crucible in a vertical type of heating furnace to heat and melt the raw material by a heater, promoting a nucleation on a surface of a raw material melt by leaving a solid raw material in a part of the raw material melt, solidifying the raw material melt gradually from the surface of the raw material melt without a seed crystal, and growing a crystal by using a nucleus generated by the nucleation.