The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Jul. 06, 2004
Takeshi Goto, Kawasaki, JP;
Mitsugu Tajima, Kawasaki, JP;
Takayuki Yamazaki, Kawasaki, JP;
Takaya Kato, Kawasaki, JP;
Takeshi Goto, Kawasaki, JP;
Mitsugu Tajima, Kawasaki, JP;
Takayuki Yamazaki, Kawasaki, JP;
Takaya Kato, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A semiconductor device manufacture method includes the steps of forming a resist layer above a work target layer; exposing and developing the resist layer to form resist patterns including isolated pattern and dense patterns; monitoring widths of isolated and dense pattern of the resist patterns to determine trimming amounts of linewidths to be reduced; determining etching conditions for realizing the trimming amounts of both the isolated and dense patterns, the etching conditions using mixed gas of a gas having a function of mainly enhancing etching and a gas having a function of mainly suppressing etching; trimming the resist pattern under said determined etching conditions; and etching the work target layer by using said trimmed resist patterns. A desired pattern width an be realized stably by trimming using plasma etching.