The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Mar. 11, 2003
Zong Huei Lin, Taichung, TW;
Art Yu, Kaohsiung, TW;
Chia Rung Hsu, Chang-Hua Shien, TW;
Teng-chun Tsai, Hsin-Chu, TW;
Zong Huei Lin, Taichung, TW;
Art Yu, Kaohsiung, TW;
Chia Rung Hsu, Chang-Hua Shien, TW;
Teng-Chun Tsai, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A polish method for planarization is disclosed. The method uses a combination of a traditional oxide CMP and HSP-CMP (High Selectivity and Planarization) with a fix abrasive pad to meet the requirements of the CMP process for a device feature dimension under 0.18 micron even to 0.09 micron. By using a first polish step with a conventional polish pad and an oxide polish slurry, the non-uniformity of the over-fill thickness of the STI dielectric layer can be firstly removed and a much more smooth and uniform topography favorable for the HSP-CMP process the fix abrasive polishing pad can be obtained. Then the HSP-CMP process with the fix abrasive polishing pad can be performed to provide a planarized surface with accurate dimension control.