The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Mar. 31, 2005
Yuji Hori, Grenoble, FR;
Osamu Oda, Nishikasugai-gun, JP;
Mitsuhiro Tanaka, Handa, JP;
Bruno Daudin, Grenoble Cedex, FR;
Eva Monroy, Grenoble Cedex, FR;
Yuji Hori, Grenoble, FR;
Osamu Oda, Nishikasugai-gun, JP;
Mitsuhiro Tanaka, Handa, JP;
Bruno Daudin, Grenoble Cedex, FR;
Eva Monroy, Grenoble Cedex, FR;
NGK Insulators, Ltd., Nagoya, JP;
Commissariat a l'Energie Atomique, Paris, FR;
Abstract
A group III nitride underlayer including at least Al, having a dislocation density of ≦1×10/cmand a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×10/cm. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.