The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Sep. 15, 2005
Hsin-ming Chen, Tainan Hsien, TW;
Hai-ming Lee, Taipei, TW;
Shih-jye Shen, Hsin-Chu, TW;
Ching-hsiang Hsu, Hsin-Chu, TW;
Hsin-Ming Chen, Tainan Hsien, TW;
Hai-Ming Lee, Taipei, TW;
Shih-Jye Shen, Hsin-Chu, TW;
Ching-Hsiang Hsu, Hsin-Chu, TW;
eMemory Technology Inc., Hsin-Chu, TW;
Abstract
A method of fabricating a non-volatile memory based on SONOS is disclosed. By masking the peripheral circuit area with a reverse ONO photoresist layer, the residual ONO layer that is not covered by a gate within the memory array area is etched away to expose the substrate. After the etching of the ONO layer, a channel adjustment doping is carried out subsequently using the reverse ONO photoresist layer as an implant mask, thereby forming lightly doped regions next to the gate within the memory array area. Finally, the reverse ONO photoresist layer is then stripped.