The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Feb. 13, 2004
Shigeharu Monoe, Kanagawa, JP;
Takashi Yokoshima, Kanagawa, JP;
Shinya Sasagawa, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
It is an object of the present invention to enhance a selection ratio in an etching process, and provide a method for manufacturing a semiconductor device that has favorable uniform characteristic with high yield. In a method for manufacturing a semiconductor device according to the present invention, a semiconductor layer is formed, a gate insulating film is formed on the semiconductor film, a first conductive layer is formed on the gate insulating film, a second conductive layer is formed on the first conductive layer, the first conductive layer and the second conductive layer are etched to form a first conductive-layer pattern, the second conductive layer in the first conductive-layer pattern is selectively etched with plasma of boron trichloride, chlorine, and oxygen to form a second conductive-layer pattern, and a first impurity region and a second impurity region are formed in the semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile