The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Aug. 20, 2004
Applicants:
Francis Edward Hawe, Santa Clara, CA (US);
Visith Thipphavong, San Jose, CA (US);
Inventors:
Francis Edward Hawe, Santa Clara, CA (US);
Visith Thipphavong, San Jose, CA (US);
Assignee:
Tessera, Inc., San Jose, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/008 (2006.01); H01G 4/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A capacitor is provided having a first electrode including a layer of low-resistance non-silicon material. The capacitor includes a layer of silicon formed on the low-resistance material layer and a capacitor dielectric formed on the layer of silicon. A second electrode is formed on the capacitor dielectric, the second electrode including at least a material selected from the group consisting of metals, low-resistance compounds of metals, and deposited semiconductors having a dopant concentration of at least 1×10cm.