The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Jan. 07, 2002
Cheisan J. Yue, Roseville, MN (US);
Mohammed A. Fathimulla, Ellicott City, MD (US);
Eric E. Vogt, Maple Grove, MN (US);
William L. Larson, Eden Prairie, MN (US);
Cheisan J. Yue, Roseville, MN (US);
Mohammed A. Fathimulla, Ellicott City, MD (US);
Eric E. Vogt, Maple Grove, MN (US);
William L. Larson, Eden Prairie, MN (US);
Honeywell International Inc., Morristown, NJ (US);
Abstract
A varactor has a plurality of alternating P− wells and N+ regions formed in a silicon layer. Each of the P− wells forms a first N+/P− junction with the N+ region on one of its side and a second N+/P− junction with the N+ region on the other of its sides. A gate oxide is provided over each of the P− wells, and a gate silicon is provided over each of the gate oxides. The potential across the gate silicons and the N+ regions controls the capacitance of the varactor.