The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Feb. 13, 2004
Yi-tsuo Wu, Hsinchu, TW;
Jyh-shyang Wang, Hsinchu, TW;
Kun-fong Lin, Hsinchu, TW;
Nikolai A. Maleev, Hsinchu, TW;
Daniil Alexandrovich Livshits, Hsinchu, TW;
Yi-Tsuo Wu, Hsinchu, TW;
Jyh-Shyang Wang, Hsinchu, TW;
Kun-Fong Lin, Hsinchu, TW;
Nikolai A. Maleev, Hsinchu, TW;
Daniil Alexandrovich Livshits, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A fabrication method of VCSEL is used to form a contact electrode on a VCSEL in a resonance cavity. A heavily doped layer is formed in a resonance cavity where the light intensity is the weakest. A Bragg reflector is etched while the etching stop point being above the heavily doped layer. Dopants are doped to form a high-carrier-concentration ohmic channel as a connection between an electrode and the heavily doped layer. Thereby, a contact electrode is formed on the VCSEL structure in the resonance cavity without the need of high etching precision.