The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2007
Filed:
Feb. 19, 2004
Kazumasa Hasegawa, Fujimi-cho, JP;
Eiji Natori, Chino, JP;
Takao Nishikawa, Shiojiri, JP;
Koichi Oguchi, Suwa, JP;
Tatsuya Shimoda, Nagano-ken, JP;
Kazumasa Hasegawa, Fujimi-cho, JP;
Eiji Natori, Chino, JP;
Takao Nishikawa, Shiojiri, JP;
Koichi Oguchi, Suwa, JP;
Tatsuya Shimoda, Nagano-ken, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A ferroelectric memory device of the present invention includes a memory cell array in which memory cells are arranged in a matrix having first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and a ferroelectric layer disposed at least in intersection regions between the first signal electrodes and the second signal electrodes, and a peripheral circuit section for selectively writing information into or reading information from the memory cell. The memory cell array and the peripheral circuit section are formed in different layers. The peripheral circuit section is formed in a region outside the memory cell array.