The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 30, 2007

Filed:

Aug. 02, 2004
Applicants:

Gim-syang Chen, Allentown, PA (US);

Ismail Kashkoush, Orefield, PA (US);

Richard Novak, Plymouth, MN (US);

Inventors:

Gim-Syang Chen, Allentown, PA (US);

Ismail Kashkoush, Orefield, PA (US);

Richard Novak, Plymouth, MN (US);

Assignee:

Akrion Technologies, Inc., Wilmington, DE (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.


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