The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Mar. 16, 2000
Franz Laermer, Stuttgart, DE;
Andrea Schilp, Schwaebisch Gmuend, DE;
Bernhard Elsner, Kornstwestheim, DE;
Franz Laermer, Stuttgart, DE;
Andrea Schilp, Schwaebisch Gmuend, DE;
Bernhard Elsner, Kornstwestheim, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A method of plasma etching, in particular of anisotropic plasma etching, of laterally defined structures in a silicon substrate, using a process gas, includes having at least one passivating material precipitated on the side walls of the laterally defined structures at least from time to time prior to and/or during etching. In an exemplary method, at least one of the compounds selected from the group ClF, BrF, or IFis added to the process gas as a fluorine-delivering etching gas. In another exemplary method, NFis added to the process gas, at least from time to time, as an additive consuming the passivating material. Finally, in another exemplary method, a light and easily ionizable gas, in particular H, He, or Ne, is added, at least from time to time, to the process gas. The three exemplary methods may be combined.