The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Aug. 03, 2005
Ronald Naumann, Dresden, DE;
Volker Grimm, Langebrueck, DE;
Tino Meinhold, Dresden, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
In a method of forming a semiconductor structure, a substrate comprising at least one contact pad is provided. A passivation layer is formed over the substrate. A mask which does not cover a portion of the passivation layer located over the at least one contact pad is formed over the passivation layer. An etching process adapted to remove a material of the passivation layer is performed and the mask is removed. Then, a second etching process adapted to remove residues of the passivation layer from the contact pad can be performed. The removal of the mask may be performed at a temperature of the substrate in a range from about −20° C. to about 100° C. The second etching process can comprise exposing the substrate to a gaseous etchant comprising hydrogen and fluorine, an amount of hydrogen in the etchant being about equal to an amount of fluorine, or greater. Thus, a formation of oxides and/or fluorides on the at least one contact pad can be avoided.