The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
Aug. 11, 2005
Chien-lung Chu, Hsinchu, TW;
Saysamone Pittikoun, Hsinchu County, TW;
Houng-chi Wei, Hsinchu, TW;
Wei-chung Tseng, Hsinchu, TW;
Chien-Lung Chu, Hsinchu, TW;
Saysamone Pittikoun, Hsinchu County, TW;
Houng-Chi Wei, Hsinchu, TW;
Wei-Chung Tseng, Hsinchu, TW;
Powerchip Semiconductor Corp., Hsinchu, TW;
Abstract
A method of fabricating a non-volatile memory is described. A plurality of first memory units having gaps between each other is formed over a substrate. Insulating spacers are formed on the sidewalls of the first memory units. A composite layer is formed on the substrate and the gaps between the first memory units are filled with a doped polysilicon layer. Thereafter, a portion of the doped polysilicon layer is removed to form trenches. After that, a metallic layer fills the trenches. A portion of the metallic layer is removed to form a plurality of gates. The gates and the composite layer together form a plurality of second memory units. The second memory units and the first memory units together constitute a memory cell column. Then, a source region and a drain region are formed in the substrate adjacent to the two sides of the memory cell column.