The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 23, 2007
Filed:
May. 27, 2004
Koji Iizuka, Tokyo, JP;
Koji Iizuka, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device manufacturing method is provided which is capable of suppressing variation of the resistance value of resistive interconnection and preventing variation of transistor performance. A gate electrode and a resistive interconnection are formed on a substrate and impurity ions are implanted into the surface of the substrate to form source/drain regions (diffusion layers:A,B) on both sides of the gate electrode. Also, impurity ions are implanted to control the resistance value of the resistive interconnection. Next, a sidewall film is formed to cover the resistive interconnection. Then a heat treatment is performed to activate the source/drain regions (diffusion layers:A,B).