The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2007

Filed:

Nov. 04, 2004
Applicants:

Christopher R Fairley, San Jose, CA (US);

Tao-yi Fu, Fremont, CA (US);

Gershon Perelman, Cupertino, CA (US);

Bin-ming Benjamin Tsai, Saratoga, CA (US);

Inventors:

Christopher R Fairley, San Jose, CA (US);

Tao-Yi Fu, Fremont, CA (US);

Gershon Perelman, Cupertino, CA (US);

Bin-Ming Benjamin Tsai, Saratoga, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The broadband brightfield/darkfield wafer inspection system provided receives broadband brightfield illumination information via a defect detector, which signals for initiation of darkfield illumination. The defect detector forms a two dimensional histogram of the defect data and a dual mode defect decision algorithm and post processor assess defects. Darkfield radiation is provided by two adjustable height laser beams Vertical angular adjustability is provided by modifying cylindrical lens position to compensate for angular mirror change by translating an adjustable mirror, positioning the illumination spot into the sensor field of view, rotating and subsequently moving the cylindrical lens. A brightfield beamsplitter in the system is removable, and preferably replaced with a blank when performing darkfield illumination. Light level control for the system is provided by a dual polarizer first stage.


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