The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2007
Filed:
Jan. 26, 2004
Taishi Kubota, Tokyo, JP;
Yoshihiro Kitamura, Tokyo, JP;
Takuo Ohashi, Tokyo, JP;
Susumu Sakurai, Tokyo, JP;
Takayuki Kanda, Tokyo, JP;
Shinichi Horibe, Tokyo, JP;
Taishi Kubota, Tokyo, JP;
Yoshihiro Kitamura, Tokyo, JP;
Takuo Ohashi, Tokyo, JP;
Susumu Sakurai, Tokyo, JP;
Takayuki Kanda, Tokyo, JP;
Shinichi Horibe, Tokyo, JP;
Elpida Memory, Inc., Tokyo, JP;
Abstract
A manufacturing method of a semiconductor device having a trench is provided to form, at a corner portion of the trench, an oxide film which is greater in thickness and smaller in stress than at other portions. When the trench formed in the semiconductor substrate is oxidized, it is oxidized in an oxygen environment containing dichloroethylene at a predetermined weight percent to allow the formation of an oxide film having a greater thickness at the corner portion of the trench than thickness at other portions, whereby the semiconductor device improving dielectric breakdown characteristics can be obtained.