The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2007
Filed:
Jun. 25, 2004
Peter Voigt, Hallbergmoos, DE;
Gerhard Enders, Olching, DE;
Peter Voigt, Hallbergmoos, DE;
Gerhard Enders, Olching, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A buried strap contact between a trench capacitor of a memory cell and the subsequently formed selection transistor of the memory cell is fabricated such that the inner capacitor electrode layer is etched back in the trench of the trench capacitor and the uncovered insulator layer is then removed at the trench wall in order to define the region of the buried strap contact area. A liner layer is subsequently deposited in order to cover the inner capacitor electrode layer in the trench and the uncovered trench wall and thus to form a barrier layer. A spacer layer with the material of the inner electrode layer is then formed on the liner layer at the trench wall. Finally, the uncovered liner layer is removed above the inner electrode layer and the trench is filled with the material of the inner electrode layer in order to fabricate the buried strap contact.