The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2007

Filed:

Apr. 28, 2004
Applicants:

Masayuki Hattori, Tokyo, JP;

Nobuo Kawahashi, Tokyo, JP;

Inventors:

Masayuki Hattori, Tokyo, JP;

Nobuo Kawahashi, Tokyo, JP;

Assignee:

JSR Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A chemical/mechanical polishing method for polishing an object to be polished with an irregular surface, having a substrate with convexities and concavities, a stopper layer formed on the convexities of the substrate, and an embedded insulating layer formed to cover the concavities of the substrate and the stopper layer, wherein the method is characterized comprising a first polishing step of flattening the embedded insulating layer using a slurry (A) which can maintain the polishing speed at 500 Å/min or less and a second polishing step of further polishing the embedded insulating layer to cause the stopper layer on the convexities to be exposed using a slurry (B) which can maintain the polishing speed at 600 Å/min or more. The method is useful for flattening wafers during shallow trench isolation (STI) in manufacturing semiconductor devices.


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