The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 16, 2007

Filed:

Dec. 14, 2004
Applicants:

Kochan Ju, Fremont, CA (US);

Cheng Horng, San Jose, CA (US);

Youfeng Zheng, San Jose, CA (US);

Simon Liao, Fremont, CA (US);

Jei-wei Chang, Cupertino, CA (US);

Inventors:

Kochan Ju, Fremont, CA (US);

Cheng Horng, San Jose, CA (US);

Youfeng Zheng, San Jose, CA (US);

Simon Liao, Fremont, CA (US);

Jei-Wei Chang, Cupertino, CA (US);

Assignee:

Headway Technologies, Inc., Milpitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/127 (2006.01); G11B 5/83 (2006.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Currently, in a process of manufacturing a top spin valve structure, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MT value for the thin film shield that is 4 times greater than that of the free layer.


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