The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Aug. 26, 2005
Ming-hsiang Hsueh, Hsinchu, TW;
Shih-chang Tsai, Hsinchu, TW;
Ming-Hsiang Hsueh, Hsinchu, TW;
Shih-Chang Tsai, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method for manufacturing a non-volatile memory. The method comprises steps of forming a first dielectric layer on a substrate and forming a dummy gate layer on the first dielectric layer. Further, the dummy gate layer is defined to form a plurality of dummy gates and a doped region is formed in the substrate by using the dummy gates as a mask. A second dielectric layer is formed on a portion of the first dielectric layer corresponding to the location of the doped region and the dummy gates are removed to expose a portion of the first dielectric layer. A conductive layer is formed over the substrate to cover the second dielectric layer and the first dielectric layer.