The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Aug. 06, 2004
Erwin J. Prinz, Austin, TX (US);
Ramachandran Muralidhar, Austin, TX (US);
Rajesh A. Rao, Austin, TX (US);
Michael A. Sadd, Austin, TX (US);
Robert F. Steimle, Austin, TX (US);
Craig T. Swift, Austin, TX (US);
Bruce E. White, Round Rock, TX (US);
Erwin J. Prinz, Austin, TX (US);
Ramachandran Muralidhar, Austin, TX (US);
Rajesh A. Rao, Austin, TX (US);
Michael A. Sadd, Austin, TX (US);
Robert F. Steimle, Austin, TX (US);
Craig T. Swift, Austin, TX (US);
Bruce E. White, Round Rock, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
In one embodiment, a method for discharging a semiconductor device includes providing a semiconductor substrate, forming a hole blocking dielectric layer over the semiconductor substrate, forming nanoclusters over the hole blocking dielectric layer, forming a charge trapping layer over the nanoclusters, and applying an electric field to the nanoclusters to discharge the semiconductor device. Applying the electric field may occur while applying ultraviolet (UV) light. In one embodiment, the hole blocking dielectric layer comprises forming the hole blocking dielectric layer having a thickness greater than approximately 50 Angstroms.