The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2007
Filed:
Oct. 20, 2004
Ted R. White, Austin, TX (US);
Alexander L. Barr, Crolles, FR;
Dejan Jovanovic, Austin, TX (US);
Bich-yen Nguyen, Austin, TX (US);
Mariam G. Sadaka, Austin, TX (US);
Voon-yew Thean, Austin, TX (US);
Ted R. White, Austin, TX (US);
Alexander L. Barr, Crolles, FR;
Dejan Jovanovic, Austin, TX (US);
Bich-Yen Nguyen, Austin, TX (US);
Mariam G. Sadaka, Austin, TX (US);
Voon-Yew Thean, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
P channel transistors are formed in a semiconductor layer that has a (110) surface orientation for enhancing P channel transistor performance, and the N channel transistors are formed in a semiconductor layer that has a (100) surface orientation. To further provide P channel transistor performance enhancement, the direction of their channel lengths is selected based on their channel direction. The narrow width P channel transistors are preferably oriented in the <100> direction. The wide channel width P channel transistors are preferably oriented in the <110> direction.